S3F84B8_UM_REV 1.00 21 ELECTRICAL DATA21-11Table 21-10 LVR Circuit Characteristics(TA = 25C, VDD = 1.8V to 5.5V)Parameter Symbol Conditions Minimum Typical Maximum UnitLow voltage reset VLVR – 1.82.12.83.43.71.92.33.03.63.92.02.53.23.84.1VV DD V LVR,MAX(Reset when the voltage decreases )V LVRV LVR,MINchip starts working when the voltage increases )Figure 21-5 LVR Reset TimingTable 21-11 Flash Memory AC Electrical Characteristics(TA = –40C to + 85C at VDD = 1.8V to 5.5V)Parameter Symbol Conditions Minimum Typical Maximum UnitFlash Erase/Write/Read voltage Fewrv VDD 1.8 5.0 5.5 VProgramming time (1) Ftp 20 – 30 uSChip erasing time (2) Ftp1 32 – 70 mSSector erasing time (3) Ftp2 4 – 12 mSData access time FtRS VDD = 2.0V – 250 – nSNumber of writing/erasing FNwe – 10,000 – – TimesData retention Ftdr – 10 – – YearsNOTE:1. Programming time specifies the time during which one byte (8-bit) is programmed.2. Chip erasing time specifies the time during which the entire program memory is erased.3. Sector erasing time specifies the time during which the 128 byte block is erased.4. Chip erasing is available in Tool Program mode only.
