S3F84B8_UM_REV 1.00 6 INSTRUCTION SET6-526.3.39 LDC/LDE — LOAD MEMORY (CONTINUED)LDC/LDEExamples: Given R0 = 11H, R1 = 34H, R2 = 01H, R3 = 04H; Program memory locations0103H = 4FH, 0104H = 1A, 0105H = 6DH, and 1104H = 88H; External data memory locations0103H = 5FH, 0104H = 2AH, 0105H = 7DH, and 1104H = 98H:LDC R0,@RR2 ; R0 contents of program memory location 0104H; R0 = 1AH, R2 = 01H, R3 = 04HLDE R0,@RR2 ; R0 contents of external data memory location 0104H; R0 = 2AH, R2 = 01H, R3 = 04HLDC(NOTE) @RR2,R0 ; 11H (contents of R0) is loaded into program memory; location 0104H (RR2),; working registers R0, R2, R3 no changeLDE @RR2,R0 ; 11H (contents of R0) is loaded into external data memory; location 0104H (RR2),; working registers R0, R2, R3 no changeLDC R0,#01H[RR2] ; R0 contents of program memory location 0105H; (01H + RR2),; R0 = 6DH, R2 = 01H, R3 = 04HLDE R0,#01H[RR2] ; R0 contents of external data memory location 0105H; (01H + RR2), R0 = 7DH, R2 = 01H, R3 = 04HLDC (note) #01H[RR2],R0 ; 11H (contents of R0) is loaded into program memory location; 0105H (01H + 0104H)LDE #01H[RR2],R0 ; 11H (contents of R0) is loaded into external data memory; location 0105H (01H + 0104H)LDC R0,#1000H[RR2] ; R0 contents of program memory location 1104H; (1000H + 0104H), R0 = 88H, R2 = 01H, R3 = 04HLDE R0,#1000H[RR2] ; R0 contents of external data memory location 1104H; (1000H + 0104H), R0 = 98H, R2 = 01H, R3 = 04HLDC R0,1104H ; R0 contents of program memory location 1104H,; R0 = 88HLDE R0,1104H ; R0 contents of external data memory location 1104H,; R0 = 98HLDC(NOTE) 1105H,R0 ; 11H (contents of R0) is loaded into program memory location; 1105H, (1105H) 11HLDE 1105H,R0 ; 11H (contents of R0) is loaded into external data memory; location 1105H, (1105H) 11HNOTE: These instructions are not supported by masked ROM type devices.
