Keithley 4200A-SCS Reference Manual

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Keithley 4200A-SCS Reference Manual Manual pdf 1359 page image

Appendix L: Wafer-level reliability testing Model 4200A-SCS Parameter Analyzer Reference ManualL-10 4200A-901-01 Rev. C / February 2017Figure 838: Process flow HCI/NBTI/constant current EMV-ramp and J-ramp testsCharge-to-breakdown measurement (QBD) tests are a measure of time-dependent gate oxidebreakdown. They are a standard method used to determine quality of gate oxides in MOS devices.The V-ramp test starts at the use-condition voltage (or lower) and ramps linearly from this value untiloxide breakdown. The J-ramp starts at a low current and ramps exponentially until oxide breakdown.User modules for these tests are provided in the wlrlib user library. The user modules in thewlrlib user library run linear regression and charge-to-breakdown (Q BD) ramp tests for wafer-levelreliability (WLR) testing. These user modules are summarized in the table below.wlrlib user modulesUser module Descriptionllsq1 Performs simple linear regression.qbd_rmpv Performs a charge-to-breakdown test using theQBD V-ramp test.qbd_rmpj Performs a charge-to-breakdown test using theQBD J-ramp test.