Keithley 4200A-SCS Reference Manual

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Keithley 4200A-SCS Reference Manual Manual pdf 1357 page image

Appendix L: Wafer-level reliability testing Model 4200A-SCS Parameter Analyzer Reference ManualL-8 4200A-901-01 Rev. C / February 2017You can modify the em-const-i project to test additional devices. Each SMU in the test system cancurrent-stress one device. Therefore, if there are eight SMUs in the test system, you can stress up toeight devices can be stressed, as shown in the following figure.Current stressing: When setting the current stress level for each device in the subsite, keep in mindthat a setting of zero (0) connects the device pin to the ground unit (0 V ground). In order to currentstress a device, the current stress level must be set to a non-zero value.Figure 836: EM test: Eight devices being current stressed by eight SMUsCharge-to-Breakdown Test of Dielectrics projectThe qbd project includes tests for the ramp-v test and the ramp-j test. These tests adhere to theJESD35-A standard procedures for wafer-level testing of thin dielectrics. This project does not usesubsite cycling.Details on these tests are described in V-ramp and J-ramp tests (on page L-10).Figure 837: qbd project tree