Schottky Barrier Diodes (SBD)1Publication date: April 2004 SKH00036BEDMA2Z748Silicon epitaxial planar typeFor super high speed switchingFor small current rectification■ Features• Low V F type of MA3X720• Low forward voltage V F and good rectification efficiency• Optimum for high frequency rectification because of its shortreverse recovery time t rr■ Absolute Maximum Ratings T a = 25°CParameter Symbol Rating UnitReverse voltage VR 20 VRepetitive peak reverse voltage V RRM 20 VForward current (Average) I F(AV) 300 mANon-repetitive peak forward IFSM 3 Asurge current *Junction temperature T j 125 °CStorage temperature T stg −55 to +125 °CMarking Symbol: 2KParameter Symbol Conditions Min Typ Max UnitForward voltage V F I F = 300 mA 0.4 VReverse current IR V R = 10 V 30 μATerminal capacitance C t V R = 0 V, f = 1 MHz 60 pFReverse recovery time * t rr I F = I R = 100 mA 5 nsI rr = 0.1 I R , R L = 100 Ω■ Electrical Characteristics Ta = 25°C ± 3°CUnit: mm1: Anode2: CathodeEIAJ: SC-76 SMini2-F1 PackageNote) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3. Absolute frequency of input and output is 400 MHz.4.*: t rr measurement circuitBias Application Unit (N-50BU)90%Pulse Generator(PG-10N)R s = 50 ΩWave Form Analyzer(SAS-8130)R i = 50 Ωt p = 2 μstr = 0.35 nsδ = 0.05I F = 100 mAIR = 100 mARL = 100 Ω10%Input Pulse Output PulseI rr = 0.1 I Rt r t pt rrV RI FttA5˚5˚1.25±0.1 0.7±0.12.5±0.21.7±0.10.4±0.10 to 0.1(0.15)0.160.5±0.112 +0.1–0.060.35±0.10 to 0.1This product complies with the RoHS Directive (EU 2002/95/EC).