Samsung 1H 2011 Selection Manual

samsung.com/semi/sram18 1H 2011DDR I / II / II+ddr SYncHronouS SrAMType Density Organization Part Number Package Vdd (V) Access TimetCD (ns)Cycle Time I/O Voltage(V)ProductionStatusCommentsDDR16Mb 512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production8Mb 256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designsDDR IICIo/sIo72Mb4Mx18K7I641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIo-2BK7I641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIo-4BK7J641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production sIo-2B2Mx36K7I643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIo-2BK7I643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIo-4BK7J643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production sIo-2B36Mb2Mx18K7I321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIo-2BK7I321884C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIo-4BK7J321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production sIo-2B1Mx36K7I323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIo-2BK7I323684C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIo-4BK7J323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production sIo-2B18Mb1Mx18K7I161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIo-2BK7I161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production CIo-4BK7J161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production sIo-2B512Kx36K7J163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production sIo-2BK7I163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIo-2BK7I163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production CIo-4BDDR II+CIo36Mb2Mx18K7K3218t2C 165-FBGA 1.8 0.45 400 1.5 Mass Production DDRII + CIo-2B,2 clocks latancyK7K3218U2C 165-FBGA 1.8 0.45 400 2.5 Mass Production DDRII + CIo-2B,2.5 clocks latancy1Mx36K7K3236t2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIo-2B,2 clocks latancyK7K3236U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIo-2B,2.5clocks latancy18Mb1Mx18K7K1618t2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIo-2B,2 clocks latancyK7K1618U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIo-2B,2.5clocks latancy512Kx36 K7K1636t2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIo-2B,2 clocks latancyNotes: 2B = Burst of 24B = Burst of 4sIo = separate I/oCIo = Common I/oFor DDR II CIo/sIo: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuitFor DDR II+ CIo: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz