©2000 Fairchild Semiconductor International Rev. A, February 2000TIP31 Series(TIP31/31A/31B/31C)NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings T C=25°C unless otherwise notedElectrical Characteristics T C=25°C unless otherwise noted* Pulse Test: PW≤300μs, Duty Cycle≤2%Symbol Parameter Value UnitsV CBO Collector-Base Voltage : TIP31: TIP31A: TIP31B: TIP31C406080100VVVVV CEO Collector-Emitter Voltage : TIP31: TIP31A: TIP31B: TIP31C406080100VVVVV EBO Emitter-Base Voltage 5 VI C Collector Current (DC) 3 AI CP Collector Current (Pulse) 5 AI B Base Current 1 AP C Collector Dissipation (T C=25°C) 40 WP C Collector Dissipation (Ta =25°C) 2 WT J Junction Temperature 150 °CT STG Storage Temperature - 65 ~ 150 °CSymbol Parameter Test Condition Min. Max. UnitsV CEO(sus) * Collector-Emitter Sustaining Voltage: TIP31: TIP31A: TIP31B: TIP31CIC = 30mA, IB = 0 406080100VVVVICEO Collector Cut-off Current: TIP31/31A: TIP31B/31CVCE = 30V, I B = 0VCE = 60V, I B = 00.30.3mAmAI CES Collector Cut-off Current: TIP31: TIP31A: TIP31B: TIP31CVCE = 40V, VEB = 0VCE = 60V, VEB = 0VCE = 80V, VEB = 0VCE = 100V, VEB = 0200200200200μAμAμAμAIEBO Emitter Cut-off Current VEB = 5V, I C = 0 1 mAh FE * DC Current Gain VCE = 4V, IC = 1AVCE = 4V, IC = 3A2510 50V CE (sat) * Collector-Emitter Saturation Voltage I C = 3A, IB = 375mA 1.2 VV BE (sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 3A 1.8 Vf T Current Gain Bandwidth Product V CE = 10V, I C = 500mA 3.0 MHzTIP31 Series(TIP31/31A/31B/31C)Medium Power Linear Switching Applications• Complementary to TIP32/32A/32B/32C1.Base 2.Collector 3.Emitter1 TO-22039